Details

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BUY IRF3415STRLPBF https://www.utsource.net/itm/p/848430.html
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF3415STRL with Lead Free Packaging on Tape and Reel Left

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source On Resistance	RDS(on)	-	0.028	-	惟	VGS = 10V, ID = 16A, Ta = 25掳C
Gate Threshold Voltage	VGS(th)	2.0	-	4.0	V	ID = 250渭A
Continuous Drain Current	ID	-	39	-	A	TC = 25掳C
Pulse Drain Current	IDM	-	160	-	A	tp = 10ms, TC = 25掳C
Total Gate Charge	Qg	-	47	-	nC	VGS = 10V
Input Capacitance	Ciss	-	2100	-	pF	VDS = 0V, f = 1MHz
Output Capacitance	Coss	-	450	-	pF	VDS = 20V, f = 1MHz
Reverse Transfer Capacitance	Crss	-	350	-	pF	VDS = 20V, f = 1MHz

Instructions for Use:

1. Mounting and Handling: Ensure the device is handled with care to avoid damage to the leads or body. Mount in a well-ventilated area to ensure proper heat dissipation.
2. Power Supply Considerations: Verify that the power supply can provide sufficient current without exceeding the maximum ratings of the device.
3. Gate Drive Requirements: Apply gate drive voltages within the specified range to avoid improper operation or damage. Ensure the gate driver circuitry can source and sink the required gate charge.
4. Thermal Management: Monitor operating temperatures to stay within the safe operating area. Use appropriate heatsinks or cooling solutions if necessary.
5. Protection Circuits: Implement protection circuits such as overcurrent protection, short-circuit protection, and thermal shutdown mechanisms to safeguard the device.
6. Layout Considerations: Design PCB layouts with minimal parasitic inductances and resistances to optimize performance. Keep high-current paths short and direct.
7. Storage Conditions: Store in a dry, cool place away from direct sunlight and sources of electromagnetic interference.

For detailed specifications and additional information, refer to the manufacturer's datasheet.

(For reference only)