Details

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BUY IRLML5203TRPBF https://www.utsource.net/itm/p/854740.html
-30V Single P-Channel HEXFET Power MOSFET in a Micro 3 package; Similar to IRLML5203 with Tape and Reel and Lead Free Packaging

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source On-Resistance	RDS(on)	-	5.5	-	m惟	VGS = 4.5V, ID = 1A
Gate Threshold Voltage	VGS(th)	0.8	-	2.0	V	ID = 250渭A
Continuous Drain Current	ID	-	-	6.5	A	TC = 25掳C
Power Dissipation	PD	-	-	390	mW	TC = 25掳C
Total Gate Charge	Qg	-	7.6	-	nC	VGS = 4.5V
Input Capacitance	Ciss	-	140	-	pF	VDS = 10V
Output Capacitance	Coss	-	25	-	pF	VDS = 10V
Reverse Transfer Capacitance	Crss	-	12	-	pF	VDS = 10V

Instructions for Use:

1. Mounting: Ensure proper mounting on a PCB with adequate heat dissipation if operating near maximum current or power.
2. Voltage Handling: Do not exceed the maximum voltage ratings specified in the datasheet to avoid damage.
3. Current Limitations: Operate within the continuous drain current limits to prevent overheating and potential failure.
4. Gate Drive: Apply sufficient gate-source voltage (VGS) to ensure low RDS(on). For optimal performance, use VGS values as specified in the parameter table.
5. Thermal Consideration: Monitor junction temperature; ensure it stays within safe operating limits especially under high load conditions.
6. Capacitance Awareness: Be aware of the input, output, and reverse transfer capacitances which can affect switching speeds and overall circuit performance.
7. Storage and Handling: Store in dry conditions and handle with care to avoid electrostatic discharge (ESD) damage.

For detailed specifications and further information, refer to the manufacturer's datasheet.

(For reference only)