Details

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BUY 2SA1387 https://www.utsource.net/itm/p/875620.html
PNP SILICON EPITAXIAL TRANSISTOR MP-3

Parameter	Symbol	Conditions	Min	Typ.	Max	Unit
Collector-Emitter Voltage	V(BR)CEO	IC = 0.5 mA	-	-	60	V
Emitter-Base Voltage	V(BR)EBO	IE = 5 mA	-	-	6	V
Collector Current	IC	VCE = 30 V	-	100	-	mA
Base Current	IB	VCE = 30 V, IC = 100 mA	-	2	-	mA
DC Current Gain	hFE	IC = 150 mA, VCE = 5 V	80	400	-	-
Transition Frequency	fT	IC = 10 mA, VCE = 3 V	-	200	-	MHz
Power Dissipation	PD	Tc = 25掳C	-	-	625	mW
Junction Temperature	TJ	Operating Range	-55	-	150	掳C

Instructions for Use:

1. Mounting: Ensure the transistor is mounted on a suitable heatsink if operating at high power levels to maintain junction temperature within limits.
2. Biasing: Carefully set base biasing to avoid exceeding maximum ratings for base current and collector-emitter voltage.
3. Handling: Handle with care to prevent damage from electrostatic discharge (ESD). Use appropriate anti-static measures.
4. Testing: When testing or measuring parameters, ensure that the test conditions match those specified in the table to get accurate readings.
5. Storage: Store in a dry environment away from direct sunlight and extreme temperatures to preserve performance characteristics.
6. Application: Suitable for general-purpose switching and amplification applications where low to medium power handling is required.

(For reference only)