Details

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BUY BUK7535-55A https://www.utsource.net/itm/p/876607.html
TrenchMOS tm standard level FET - Configuration: Single N-channel ; ID DC: 35 A; Qgd typ: 9 nC; RDSon: 35@10V mOhm; Thermal Resistance: 1.7 K/W; VDSmax: 55 V

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Input Voltage	V_IN	4.5	-	60	V
Continuous Output Current	I_OUT_CONT	-	12	-	A	@T_C = 25掳C
Peak Output Current	I_OUT_PEAK	-	30	-	A	@T_C = 25掳C, t < 1 ms
Junction Temperature	T_J	-	-	150	掳C
Storage Temperature	T_STG	-40	-	150	掳C
Thermal Resistance, Junction to Case	R_THJC	-	0.7	-	掳C/W
Forward Voltage Drop	V_F	-	0.9	-	V	@I_OUT = 12 A, T_C = 25掳C
Reverse Recovery Time	t_rr	-	85	-	ns	@I_T = -2 A, dI/dt = 200 A/渭s

Instructions for Use:

1. Input Voltage Range: Ensure the input voltage is within the specified range of 4.5V to 60V to avoid damage or improper operation.
2. Current Handling: The device can handle a continuous output current up to 12A at a case temperature of 25掳C. For peak currents, it can withstand up to 30A for less than 1ms under similar conditions.
3. Temperature Management: Keep the junction temperature below 150掳C. Proper heat sinking may be necessary depending on the application.
4. Storage Conditions: Store the device in an environment where temperatures range from -40掳C to 150掳C.
5. Thermal Considerations: Pay attention to the thermal resistance between the junction and the case (0.7掳C/W) to ensure adequate cooling in high-power applications.
6. Forward Voltage Drop: At an output current of 12A and a case temperature of 25掳C, expect a forward voltage drop around 0.9V.
7. Reverse Recovery Time: The reverse recovery time is approximately 85ns when tested under specific transient conditions.

For detailed specifications and further information, refer to the datasheet provided by the manufacturer.

(For reference only)