Details

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BUY IRF520NS https://www.utsource.net/itm/p/898256.html
Power MOSFETVdss=100V, Rdson=0.20ohm, Id=9.7A

Parameter	Symbol	Min	Typical	Max	Unit	Conditions
Drain-Source Voltage	V(DS)	-	-	100	V	Continuous
Gate-Source Voltage	V(GS)	-10	-	20	V	Continuous
Continuous Drain Current	I(D)	-	9.2	-	A	Tc = 25掳C, Rth(j-c) = 1.47掳C/W
Pulse Drain Current	I(P)	-	28	-	A	t = 10ms, Duty cycle = 1%
Power Dissipation	P(TOT)	-	-	63	W	Tc = 25掳C
Junction Temperature	T(j)	-	-	150	掳C	-
Storage Temperature	T(stg)	-55	-	150	掳C	-
Thermal Resistance	Rth(j-c)	-	1.47	-	掳C/W	-

Instructions for IRF520NS:

1. Handling Precautions:

   • Avoid exceeding the maximum ratings listed in the table to prevent damage.
   • Use proper anti-static precautions when handling the device.

2. Mounting:

   • Ensure adequate heat sinking if operating near maximum current and power dissipation levels.
   • Mount the device in a way that allows for effective thermal management.

3. Gate Drive:

   • Apply gate voltage within the specified range to avoid damaging the gate oxide.
   • Ensure the gate drive circuit can supply sufficient current during switching transitions.

4. Switching Operation:

   • Operate within the safe operating area (SOA) for reliable performance.
   • Be aware of the device's switching speed limitations to prevent overheating or excessive power loss.

5. Storage and Environment:

   • Store in recommended temperature ranges to maintain device integrity.
   • Protect from moisture and corrosive environments.

6. Testing:

   • Verify all connections are secure before applying power.
   • Test under controlled conditions to ensure parameters meet application requirements.

(For reference only)