Details

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BUY 2N3108 https://www.utsource.net/itm/p/914967.html
Small Signal Transistors

Parameter	Symbol	Min	Typ	Max	Unit
Collector-Emitter Voltage	V(BR)CEO	-	-	100	V
Emitter-Base Voltage	V(BR)EBO	-	-	5	V
Collector-Base Voltage	V(BR)CBO	-	-	70	V
Collector Current	IC	-	2	4	A
Base Current	IB	-	-	0.4	A
Power Dissipation	Ptot	-	-	30	W
Junction Temperature	Tj	-	25	150	掳C
Storage Temperature	Tstg	-65	-	150	掳C

Instructions for Use:

1. Mounting and Handling: Handle the device carefully to avoid damage. Ensure proper heat sinking if operating near maximum power dissipation limits.
2. Biasing: Ensure that the base current (IB) is within specified limits to prevent overheating or damage to the transistor.
3. Operating Conditions: Operate within the given temperature ranges to ensure reliable performance. Avoid exceeding the maximum junction temperature.
4. Voltage Ratings: Do not exceed the rated voltages across any two terminals to prevent breakdown or permanent damage.
5. Current Limitation: Keep collector current within the specified limits to maintain safe operation and longevity of the device.
6. Storage: Store in a dry, cool place away from direct sunlight and corrosive environments.

(For reference only)