Details
BUY 1N1186 https://www.utsource.net/itm/p/923399.html
Military Silicon Power Rectifier
| Parameter | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Repetitive Peak Reverse Voltage | V_RRM | - | 200 | - | V |
| Average Rectified Current (Tc = 100掳C) | I_F(AV) | - | 3.0 | - | A |
| Non-repetitive Surge Current | I_SM | - | 60 | - | A |
| Junction Temperature | T_j | -55 | - | 175 | 掳C |
| Storage Temperature | T_stg | -55 | - | 150 | 掳C |
Instructions for Use:
Handling Precautions:
- Avoid exposing the device to temperatures outside the specified storage and junction temperature ranges.
- Handle with care to prevent damage from electrostatic discharge (ESD).
Mounting:
- Ensure proper heat sinking if operating near maximum current ratings.
- Follow recommended soldering profiles to avoid thermal shock.
Operation:
- Do not exceed the repetitive peak reverse voltage to prevent breakdown.
- Keep the average rectified current within the rated limit to ensure long-term reliability.
- Be cautious of surge currents; they should not exceed the non-repetitive surge current rating.
Testing:
- When testing, adhere to the specified test conditions to obtain accurate performance metrics.
- Verify that all parameters are within the operational limits specified in the table.
Applications:
- Suitable for general-purpose rectification in power supplies and other similar applications where reliable rectification is required.
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