Details

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BUY 2N685 https://www.utsource.net/itm/p/923684.html
Silicon Power Thyristor; Package: TO-208 AA;

Parameter	Value	Unit
Collector-Emitter Voltage (VCEO)	100	V
Collector-Base Voltage (VCBO)	100	V
Emitter-Base Voltage (VEBO)	5	V
Continuous Collector Current (IC)	2	A
Power Dissipation (Ptot)	40	W
Junction Temperature (Tj)	-55 to +150	掳C
Storage Temperature (Tstg)	-65 to +150	掳C
Transition Frequency (fT)	3	MHz

Instructions for Use:

1. Handling Precautions: Avoid exceeding the maximum ratings specified in the table to prevent damage to the device.
2. Mounting: Ensure proper heat dissipation if operating near maximum power dissipation limits. Use a heatsink if necessary.
3. Storage: Store in a dry, cool place within the storage temperature range provided.
4. Installation: Ensure correct orientation and connection of pins to avoid short circuits or incorrect operation.
5. Operation: Operate within the recommended operating conditions to ensure reliable performance.
6. Testing: When testing the device, use appropriate safety measures and do not exceed the maximum voltage and current ratings.

(For reference only)