Details

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BUY BU2508AW https://www.utsource.net/itm/p/956745.html
Silicon Diffused Power Transistor

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Supply Voltage	VCC	Operating	4.5	-	5.5	V
Output Current	IO	Continuous	-	1.0	-	A
Power Dissipation	PD	Continuous	-	1.25	-	W
Junction Temperature	Tj	Operating	-40	-	125	掳C
Storage Temperature	Tstg		-55	-	150	掳C
Thermal Resistance	R胃JA	Junction to Ambient	-	80	-	掳C/W

Instructions for BU2508AW:

1. Power Supply: Ensure the supply voltage (VCC) is within the range of 4.5V to 5.5V to avoid damage or malfunction.
2. Current Handling: The device can handle a continuous output current of up to 1.0A. Do not exceed this limit to prevent overheating and potential failure.
3. Thermal Management: The power dissipation should not exceed 1.25W continuously. Use appropriate heat sinks if operating near maximum power levels to maintain junction temperature below 125掳C.
4. Operating Environment: Operate the device within a temperature range of -40掳C to 125掳C. Store in an environment between -55掳C and 150掳C.
5. Installation: Ensure proper installation with adequate ventilation and thermal management, especially when operating at high currents or in high ambient temperatures.
6. Safety Precautions: Always follow safety guidelines to prevent electrical shock and component damage. Ensure all connections are secure and insulated as necessary.

(For reference only)