Details

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BUY 2SD316 https://www.utsource.net/itm/p/1003593.html

Parameter	Symbol	Value	Unit
Collector-Emitter Voltage	V CES	600	V
Collector Current (Continuous)	I C	15	A
Collector Current (Pulse)	I CM	30	A
Emitter-Base Voltage	V EBO	5	V
Power Dissipation	P T	120	W
Junction Temperature	T J	-55 to +150	掳C
Storage Temperature	T STG	-55 to +150	掳C

Instructions for Use:

1. Handling Precautions: Avoid exposing the device to temperatures outside its operational range (-55掳C to +150掳C). Ensure proper heat sinking when operating near maximum power dissipation.

2. Mounting: Mount the transistor in a way that ensures good thermal conductivity to a heatsink if operating at high currents or power levels.

3. Electrical Connections: Ensure all connections are secure and correctly wired. The collector, base, and emitter must be connected according to the circuit design specifications.

4. Protection Circuits: Incorporate appropriate protection circuits such as flyback diodes when using the transistor in switching applications to protect against voltage spikes.

5. Storage: Store in a dry, cool place away from direct sunlight and sources of electromagnetic interference.

6. Derating: For continuous operation, derate the power dissipation linearly above an ambient temperature of 25掳C to ensure reliable operation within safe limits.

(For reference only)