Details

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BUY STTH15L06FP https://www.utsource.net/itm/p/1015748.html
Ultrafast recovery - 1200 V diode

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Forward Voltage	VF	IF = 1 A	0.95	-	1.25	V
Reverse Breakdown Voltage	VBR	IR = 5 mA	60	-	80	V
Maximum Repetitive Peak Reverse Voltage	VRRM	Non-repetitive	-	-	60	V
Maximum Average Rectified Forward Current	IFAV	T = 25掳C	-	1	-	A
Junction Temperature	TJ	-	-40	-	150	掳C
Storage Temperature	TSTG	-	-40	-	150	掳C

Instructions for STTH15L06FP:

1. Handling and Storage:

   • Store the device in a dry, cool place within the specified storage temperature range (-40掳C to 150掳C).
   • Handle with care to avoid damage to the leads and body.

2. Mounting:

   • Ensure proper alignment of the device during mounting to avoid mechanical stress.
   • Use appropriate soldering techniques and ensure temperatures do not exceed the maximum junction temperature (150掳C).

3. Electrical Connections:

   • Connect the forward voltage (VF) terminals correctly to prevent reverse polarity which can lead to device failure.
   • Ensure that the operating voltage does not exceed the reverse breakdown voltage (VBR) to avoid damaging the component.

4. Thermal Management:

   • Monitor the junction temperature (TJ) to stay within the operational limits. Excessive heat can reduce the lifespan of the device.
   • Consider heatsinking if continuous operation near the maximum current is expected.

5. Testing:

   • During testing, ensure that the test conditions match those specified in the parameter table to accurately assess performance.
   • Avoid exceeding the peak reverse voltage (VRRM) even under non-repetitive conditions to maintain reliability.

6. Compliance:

   • Verify that the application complies with all relevant safety standards and regulations.

(For reference only)