Details

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BUY IRFBA90N20D https://www.utsource.net/itm/p/1126390.html
Power MOSFETVdss=200V, Rdsonmax=0.023ohm, Id=98A

Parameter	Symbol	Min	Typ	Max	Unit	Condition
Drain-Source Voltage	V(DS)			200	V
Gate-Source Voltage	V(GS)	-15		15	V
Continuous Drain Current	I(D)		3.7		A	Tc = 25掳C
Pulse Drain Current	I(D)		9		A	Tp = 10ms, Rth(j-c) = 1.4掳C/W
Gate Charge	Qg		10		nC	V(GS) = 10V
Input Capacitance	Ciss		860		pF	V(DS) = 15V, f = 1MHz
Output Capacitance	Coss		220		pF	V(DS) = 15V, f = 1MHz
Reverse Transfer Capacitance	Crss		220		pF	V(DS) = 15V, f = 1MHz

Instructions:

1. Mounting and Handling:

   • Handle with care to avoid damage to the leads and body.
   • Ensure proper heat sinking if operating near maximum current ratings.

2. Electrical Connections:

   • Connect the drain (D), source (S), and gate (G) according to the circuit diagram.
   • Use short leads to minimize inductance and improve switching performance.

3. Operating Conditions:

   • Do not exceed the maximum ratings specified in the table.
   • For continuous operation, ensure ambient temperature does not exceed the device's operational limits.

4. Gate Drive:

   • Apply appropriate gate voltage within the specified range to avoid overdrive or insufficient drive.
   • Use a low impedance driver for fast switching applications.

5. Thermal Considerations:

   • Monitor junction temperature; use adequate cooling methods like heatsinks or forced air cooling as necessary.
   • Refer to thermal resistance data for calculating safe operating areas.

6. Storage:

   • Store in a dry, cool place away from direct sunlight.
   • Keep in anti-static packaging until ready for use.

(For reference only)