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BUY AT24C02BN-SH-T https://www.utsource.net/itm/p/1143320.html
8 SOIC, PB/HALO FREE,NIPDAU, 1.8VSERIAL EE
Parameter | Description | Value | Unit |
---|---|---|---|
Storage Capacity | Total memory storage | 256 | bytes |
Operating Voltage | Supply voltage range | 1.8 to 5.5 | V |
Operating Temperature | Temperature range for operation | -40 to +85 | °C |
Standby Current | Current consumption in standby mode | 1 | μA |
Write Cycle Time | Time required to complete a write cycle | 5 | ms |
Package Type | Type of packaging | SOIC-8 | |
Endurance Cycles | Guaranteed number of write cycles per cell | 1,000,000 | cycles |
Data Retention | Duration data is retained without power | 200 | years |
Instructions for Use:
Power Supply:
- Ensure the operating voltage is within the specified range (1.8V to 5.5V) to avoid damage or improper operation.
Addressing:
- The device has three hardware address pins (A0, A1, A2) that can be used to set the device address in an I2C bus system. This allows up to eight devices on the same bus with unique addresses.
Data Writing:
- Before writing data, ensure that the previous write cycle has completed. Each write cycle takes up to 5ms.
- Do not exceed the endurance cycles to maintain reliability.
Data Reading:
- Data can be read from any byte address. The device will automatically increment the address after each byte read.
Temperature Considerations:
- Operate the device within the specified temperature range (-40°C to +85°C) to ensure reliable performance and longevity.
Handling Precautions:
- Handle the device with care to avoid electrostatic discharge (ESD), which can damage the component.
- Follow proper soldering techniques to prevent thermal shock.
Storage:
- Store the device in a dry environment when not in use to prevent corrosion and degradation over time.
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