Details

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BUY IXGH40N60A https://www.utsource.net/itm/p/1148775.html
Low VCEsat IGBT, High speed IGBT

Parameter	Symbol	Min	Typ	Max	Unit	Description
Collector-Emitter Voltage	V CES			600	V	Maximum collector-emitter voltage
Collector Current	I C		40		A	Continuous collector current
Power Dissipation	P TOT			215	W	Total power dissipation
Junction Temperature	T J	-55		175	掳C	Operating junction temperature range
Storage Temperature	T STG	-55		175	掳C	Storage temperature range
Gate-Emitter Voltage	V GES	-30		30	V	Gate-emitter voltage
Turn-on Delay Time	t d(on)		98		ns	Turn-on delay time
Rise Time	t r		52		ns	Rise time
Turn-off Delay Time	t d(off)		85		ns	Turn-off delay time
Fall Time	t f		50		ns	Fall time

Instructions for IXGH40N60A:

1. Handling Precautions: The IXGH40N60A is sensitive to electrostatic discharge (ESD). Use proper ESD protection measures when handling.
2. Mounting: Ensure the device is mounted on a suitable heatsink to dissipate heat effectively, especially under high-power conditions.
3. Biasing: Apply appropriate gate biasing to ensure reliable turn-on and turn-off characteristics. Avoid exceeding the maximum gate-emitter voltage.
4. Operating Conditions: Operate within specified temperature ranges to avoid thermal damage. Monitor the junction temperature to prevent overheating.
5. Storage: Store in a dry environment within the specified storage temperature range to prevent degradation.
6. Testing: When testing or measuring parameters, use equipment that can accurately measure fast switching times and high voltages without damaging the device.
7. Application: Suitable for applications requiring high-voltage switching such as motor control, power supplies, and inverters.

(For reference only)