Details

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BUY 61MQ40 https://www.utsource.net/itm/p/1154745.html

Parameter	Description	Value	Unit
Part Number	Device identifier	61MQ40	-
Type	Device type	MOSFET	-
Configuration	Channel configuration	N-Channel	-
VDS (Max)	Drain-source voltage	60	V
VGS(th)	Gate threshold voltage	2.0 to 4.0	V
ID (Max)	Continuous drain current	40	A
RDS(on) (Max)	On-resistance at VGS=10V	5.5	m惟
Power Dissipation	Maximum power dissipation	180	W
Package	Housing type	TO-220	-
Operating Temp	Junction temperature range	-55 to 150	掳C

Instructions for Use:

1. Handling Precautions: The 61MQ40 is sensitive to electrostatic discharge (ESD). Handle with appropriate ESD protection measures.
2. Mounting: Ensure proper mounting and heat sinking, especially when operating near maximum power dissipation levels.
3. Biasing: Apply gate voltage within the specified VGS(th) range to ensure reliable switching operation.
4. Thermal Management: Monitor junction temperature to prevent overheating. Ensure adequate cooling based on load conditions.
5. Storage: Store in a dry environment away from direct sunlight and extreme temperatures.

(For reference only)