Details

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BUY IXGH50N60B https://www.utsource.net/itm/p/1202257.html
HiPerFAST IGBT

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Collector-Emitter Voltage	V CES	-	-	600	V
Collector Current	I C	-	-	50	A	TC = 25掳C
Power Dissipation	P TOT	-	-	175	W	TC = 25掳C
Junction Temperature	T J	-	-	175	掳C
Storage Temperature	T STG	-55	-	150	掳C
Gate Threshold Voltage	V GE(th)	3.0	4.0	5.0	V	IC = 1A
Turn-on Delay Time	t d(on)	-	80	-	ns	IG = 10A
Rise Time	t r	-	90	-	ns	IG = 10A
Turn-off Delay Time	t d(off)	-	70	-	ns	IG = -10A
Fall Time	t f	-	60	-	ns	IG = -10A

Instructions for IXGH50N60B:

1. Handling Precautions:

   • Use proper anti-static measures to prevent damage to the device.
   • Avoid exceeding the maximum ratings listed in the parameter table.

2. Mounting and Assembly:

   • Ensure good thermal management by using appropriate heat sinks or cooling solutions.
   • Follow manufacturer guidelines for PCB layout and soldering temperatures.

3. Operation Guidelines:

   • Operate within specified temperature ranges to ensure reliability and longevity.
   • Verify gate drive voltage is within the recommended range to prevent misfiring or failure.

4. Testing:

   • When testing, use controlled current sources and limit collector current to avoid overheating.
   • Ensure that all safety protocols are followed during testing procedures.

5. Storage:

   • Store in a dry, cool place away from direct sunlight.
   • Keep in original packaging until ready for use to protect against static discharge.

Note: For detailed specifications and application notes, refer to the official datasheet provided by the manufacturer.

(For reference only)