Details

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BUY 2SD1007 https://www.utsource.net/itm/p/1226021.html
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Collector-Emitter Voltage	VCEO	-	-	60	V	IC = 0.5A, Tc = 25掳C
Emitter-Collector Voltage	VECE	-	-	60	V	IC = 0.5A, Tc = 25掳C
Collector-Base Voltage	VCBO	-	-	70	V	IC = 0, Tc = 25掳C
Base-Emitter Voltage	VBE	-	-	5	V	IC = 0.5A, IB = 5mA
Continuous Collector Current	IC	-	-	0.5	A	Tc = 25掳C
Storage Temperature Range	Tstg	-55	-	150	掳C
Operating Junction Temperature	TJ	-55	-	150	掳C

Instructions for Use:

1. Mounting and Handling:

   • Ensure that the device is handled with care to avoid damage to leads or body.
   • Mounting should be done using appropriate tools to prevent mechanical stress.

2. Electrical Connections:

   • Verify that all connections are correct and secure before applying power.
   • Ensure that the voltage ratings are not exceeded during operation.

3. Heat Dissipation:

   • For applications where the transistor may operate at high currents or temperatures, ensure adequate heat sinking.

4. Storage and Operation:

   • Store in a dry, cool place away from direct sunlight.
   • Operate within specified temperature ranges to ensure reliable performance.

5. Testing:

   • Before final assembly, test the transistor under controlled conditions to ensure it meets specifications.
   • Avoid prolonged testing at maximum ratings to prevent premature wear.

6. Compliance:

   • Ensure that the application complies with relevant safety standards and regulations.

(For reference only)