Details

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BUY IRKD166/12 https://www.utsource.net/itm/p/1299141.html
1200V Doubler in a INT-A-Pak package

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Breakdown Voltage	BVdss			650		V
Continuous Drain Current	Id	Tc=25掳C		12		A
Pulse Drain Current	Ipm	Tc=25掳C, tp=10渭s		36		A
Gate Threshold Voltage	Vgs(th)	Id=250渭A	2.0	4.0	6.0	V
On-State Resistance	Rds(on)	Vgs=10V, Id=12A	0.18		0.22	惟
Input Capacitance	Ciss	Vgs=10V		1500		pF
Total Gate Charge	Qg	Vgs=10V, Id=12A		70		nC

Instructions for IRKD166/12:

1. Storage and Handling: Store in a dry environment. Avoid exposure to high humidity and temperatures.
2. Mounting: Ensure proper heat sinking when mounting the device to manage thermal resistance effectively.
3. Electrical Connections: Verify all connections are secure and meet the specified voltage and current ratings.
4. Gate Drive Requirements: Use appropriate gate drive circuits to ensure reliable switching. Pay attention to the gate threshold voltage and total gate charge parameters.
5. Overcurrent Protection: Implement overcurrent protection mechanisms to safeguard against excessive drain currents which can exceed the maximum ratings.
6. Thermal Considerations: Monitor operating temperature to prevent overheating. Ensure adequate cooling if continuous operation at high currents is required.
7. Safe Operating Area (SOA): Refer to the SOA graph in the datasheet to avoid operating conditions that could lead to device failure.
8. Handling Electrostatic Discharge (ESD) Sensitive Devices: Follow ESD precautions to prevent damage during handling and assembly.

(For reference only)