Details
BUY MG150J7KS50 https://www.utsource.net/itm/p/1313566.html
TOSHIBA GTR Module Silicon N Channel IGBT
| Parameter | Value | Unit |
|---|---|---|
| Part Number | MG150J7KS50 | - |
| Type | MOSFET | - |
| Package | TO-220 | - |
| Vds (Drain-Source Voltage) | 700 | V |
| Id (Continuous Drain Current) | 150 | A |
| Pd (Power Dissipation) | 150 | W |
| Rds(on) (On-Resistance) | 50 | mΩ |
| Vgs(th) (Gate Threshold Voltage) | 4.0 | V |
| Tj (Operating Junction Temperature) | -55 to 175 | °C |
Instructions:
- Handling and Storage: Store in a dry, cool place away from direct sunlight. Use proper anti-static precautions when handling.
- Mounting: Ensure the mounting surface is flat and clean. Apply thermal compound evenly between the device and heatsink for optimal heat dissipation.
- Soldering: Preheat components before soldering. Do not exceed temperatures of 260°C for more than 10 seconds during soldering.
- Electrical Connections: Verify all connections are secure and correct. Avoid exceeding the maximum ratings specified in the table.
- Testing: After installation, test the circuit under controlled conditions to ensure proper operation and avoid damage to the device.
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