Details

---

BUY DD53S1200K https://www.utsource.net/itm/p/1352072.html

Parameter	Description	Value	Unit
Part Number	Device Identifier	DD53S1200K	-
Type	Silicon Carbide Schottky Barrier Diode	-	-
Maximum Repetitive Peak Reverse Voltage (VRRM)	Maximum reverse voltage that can be repetitively applied without breakdown	1200	V
Maximum Average Rectified Forward Current (IF(AV))	Continuous forward current at Tc = 75°C	5	A
Non-Repetitive Peak Surge Current (IFSM)	Single half-sine-wave peak current, 8.3 ms duration	60	A
Junction Capacitance (CJ0)	Capacitance at zero bias	45	pF
Reverse Recovery Time (trr)	Time for diode to recover from conducting to non-conducting state	35	ns
Operating Temperature Range (TJ)	Temperature range for junction operation	-55 to +175	°C
Storage Temperature Range (TSTG)	Temperature range for storage	-55 to +175	°C

Instructions:

1. Mounting: Ensure proper heat sinking if operating near maximum current and temperature limits.
2. Surge Handling: Do not exceed the specified surge current ratings to prevent damage.
3. Reverse Voltage Application: Ensure that the applied reverse voltage does not exceed the rated VRRM to avoid breakdown.
4. Temperature Monitoring: Keep the junction temperature within the specified operating range to ensure reliable performance.
5. Storage Conditions: Store in a dry environment within the specified storage temperature range.
6. Handling Precautions: Use appropriate ESD protection when handling to prevent damage to the device.

(For reference only)