Details

---

BUY FZ1600R17KF6CB2 https://www.utsource.net/itm/p/1352073.html
IGBT Module

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Rated Collector Voltage	VCES				1700	V
Rated Collector Current	IC	Tc = 25°C		600		A
Rated Power Dissipation	Ptot	Tc = 25°C			3800	W
Junction Temperature	Tj		-50		175	°C
Storage Temperature	Tstg		-55		175	°C
Gate Charge	Qg	IG = ±10A, VGE=±15V		4.8		nC
Turn-on Time	ton	dIC/dt = 200A/us		0.9		us
Turn-off Time	toff	dIC/dt = 200A/us		1.6		us

Instructions for Use:

1. Handling and Storage:

   • Store in a dry environment within the temperature range of -55°C to 175°C.
   • Handle with care to avoid damage to the terminals.

2. Mounting and Connection:

   • Ensure proper thermal management to keep junction temperatures within the specified range (-50°C to 175°C).
   • Connect gate terminal carefully to prevent short circuits or excessive gate voltage.

3. Operation:

   • Do not exceed the rated collector voltage (VCES) of 1700V.
   • Keep the collector current (IC) at or below 600A when the case temperature (Tc) is 25°C.
   • Monitor power dissipation (Ptot) to ensure it does not exceed 3800W at 25°C case temperature.

4. Switching Characteristics:

   • For optimal performance, consider the turn-on time (ton) of 0.9us and turn-off time (toff) of 1.6us under typical switching conditions.
   • The gate charge (Qg) is 4.8nC at IG = ±10A and VGE = ±15V, which impacts switching speed and efficiency.

5. Safety Precautions:

   • Always adhere to maximum ratings to avoid device failure or damage.
   • Implement appropriate protective measures against overvoltage and overcurrent conditions.

(For reference only)