Details

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BUY BSM400GA120DN2SE3256 https://www.utsource.net/itm/p/1364308.html
IGBT Power Module Low Loss IGBT Low inductance single switch Including fast free- wheeling diodes

Parameter	Symbol	Min	Typ	Max	Unit	Description
Blocking Voltage	V(BR)DSS	-	1200	-	V	Drain-to-Source Breakdown Voltage
Continuous Drain Current	ID	-	-	400	A	Continuous Drain Current at Tc = 25°C
On-State Resistance	RDS(on)	-	2.7	-	mΩ	On-State Resistance at VGS = 15V, ID = 80A
Gate Charge	QG	-	230	-	nC	Total Gate Charge
Input Capacitance	Ciss	-	6000	-	pF	Input Capacitance at VDS = 500V
Output Capacitance	Coff	-	950	-	pF	Output Capacitance at VDS = 500V
Switching Time	tD(on)	-	60	-	ns	Turn-on Delay Time
Switching Time	tR	-	60	-	ns	Rise Time
Switching Time	tD(off)	-	55	-	ns	Turn-off Delay Time
Switching Time	tF	-	45	-	ns	Fall Time

Instructions for Use:

1. Storage and Handling: Store in a dry environment. Follow proper ESD handling procedures to prevent damage.
2. Mounting: Ensure correct orientation during mounting. Use appropriate torque when securing screws to avoid damage.
3. Thermal Management: Ensure adequate heat dissipation to maintain junction temperature within specified limits.
4. Voltage and Current Ratings: Do not exceed the maximum ratings for voltage and current to prevent device failure.
5. Gate Drive: Apply gate drive voltages as specified to ensure reliable operation and minimize switching losses.
6. PCB Layout: Design PCB layout to minimize parasitic inductances, especially in high-frequency applications.
7. Testing: Perform initial testing under controlled conditions to validate performance parameters before full-scale deployment.

(For reference only)