Details

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BUY IXFK36N60 https://www.utsource.net/itm/p/1366149.html
N-Channel Enhancement Mode HiPerFET Power MOSFET600V,0.18惟NHiPerFETMOSFET

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Drain-Source Voltage	VDSS		-600		600	V
Gate-Source Voltage	VGS		-20		20	V
Continuous Drain Current	ID	TC = 25掳C		36		A
Pulse Drain Current	IDM	tp = 10 渭s, Repetition Rate = 1%		180		A
Power Dissipation	PD	TC = 25掳C		144		W
Junction Temperature	TJ		-55		175	掳C
Storage Temperature	TSTG		-55		175	掳C

Instructions for IXFK36N60

1. Handling and Storage:

   • Store in a dry environment to prevent moisture damage.
   • Handle with care to avoid damaging the leads or the body of the device.

2. Mounting:

   • Ensure proper heat sinking if operating near maximum current or power dissipation levels.
   • Use appropriate mounting hardware to secure the device firmly to the heatsink.

3. Electrical Connections:

   • Connect gate to control circuitry carefully to minimize stray inductance and capacitance.
   • Ensure all connections are tight and secure to prevent intermittent operation.

4. Operating Limits:

   • Do not exceed the maximum ratings specified in the parameter table.
   • Maintain junction temperature within the specified limits to ensure reliable operation.

5. Testing:

   • Test the device under controlled conditions to verify its performance before integrating into a larger system.
   • Use recommended test circuits to accurately measure parameters such as VDSS, VGS, and ID.

6. Environmental Considerations:

   • Be aware of environmental factors that could affect performance, such as humidity and temperature extremes.
   • Ensure compliance with any relevant environmental regulations or standards.

(For reference only)