Details
BUY TC5565P-15L https://www.utsource.net/itm/p/1393085.html
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology
| Parameter | Description | Specifications |
|---|---|---|
| Device Type | Static Random Access Memory (SRAM) | 64 K x 8 bits |
| Package | PLCC-32 Pin Package | Low-profile plastic leaded chip carrier |
| Supply Voltage | Vcc | 5.0V |
| Operating Temperature Range | Industrial Temp Range | -40掳C to +85掳C |
| Access Time | tAA | 15ns |
| Data Retention | 20 years at 25掳C | |
| Standby Current | ISB | 20 渭A (typical) |
| Active Current | ICC | 30 mA (maximum) |
| Output Drive Capability | IOL/IOH | 24mA/-12mA |
| Address Lines | A0-A15 | 16 lines |
| Data Lines | DQ0-DQ7 | 8 lines |
| Control Signals | !CE, !OE, !WE | Chip Enable, Output Enable, Write Enable |
Instructions for Use:
- Power Supply Connection: Connect the Vcc pin to a 5V power supply and ensure that all ground pins are properly connected to the system ground.
- Addressing: Apply the desired address to the address lines (A0-A15) to select the memory location you wish to access.
- Data Input/Output: Data is transferred via the data lines (DQ0-DQ7). For write operations, ensure the data is present on these lines before the falling edge of the write enable signal (!WE).
- Control Signals: Use the control signals (!CE, !OE, !WE) to manage read/write operations. Ensure proper timing with respect to these signals for reliable operation.
- Timing Considerations: Adhere to the specified access time (tAA) of 15ns to avoid data corruption or incorrect reads/writes.
- Handling Precautions: Handle the device with care to avoid damage from electrostatic discharge (ESD). Use appropriate ESD protection measures during handling and installation.
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