Details

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BUY MDD72-12N1B https://www.utsource.net/itm/p/1413064.html
Diode Modules

Parameter	Description	Value	Unit
Part Number	Device Identifier	MDD72-12N1B	-
Type	Device Type	MOSFET	-
Configuration	Channel Configuration	N-channel	-
VDSS	Drain-Source Voltage	700	V
ID	Continuous Drain Current	12	A
PD	Power Dissipation (at Case Temperature)	65	W
RDS(on)	On-State Resistance	0.34	惟
TJ	Junction Temperature Range	-55 to +150	掳C
Package	Package Type	TO-220	-
Gate Charge	Total Gate Charge	85	nC
Input Capacitance	Input Capacitance at VGS = 0V	1250	pF

Instructions for Use:

1. Installation:

   • Ensure that the device is handled with care to avoid damage to the leads or body.
   • Mount the device on a heatsink if operating near maximum power dissipation.

2. Electrical Connections:

   • Connect the drain, source, and gate terminals correctly according to your circuit diagram.
   • Use appropriate wire gauge to handle the current levels specified in the application.

3. Thermal Management:

   • Monitor junction temperature to ensure it remains within the operational range (-55掳C to +150掳C).
   • If necessary, use thermal paste between the device and heatsink for better heat transfer.

4. Operating Conditions:

   • Do not exceed the maximum ratings provided in the parameter table.
   • Ensure adequate ventilation or cooling if operating at high currents or power levels.

5. Storage:

   • Store in a dry environment away from direct sunlight and sources of heat.
   • Keep devices in anti-static packaging until ready for use to prevent ESD damage.

6. Handling Precautions:

   • Follow standard ESD handling procedures to prevent damage to the MOSFET.
   • Avoid exposing the device to corrosive environments or chemicals.

(For reference only)