Details

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BUY 2SC4154-T111-1F https://www.utsource.net/itm/p/1466418.html
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

Parameter	Value	Unit
Type	NPN Transistor	-
Collector-Emitter Voltage (VCEO)	80	V
Collector-Base Voltage (VCBO)	80	V
Emitter-Base Voltage (VEBO)	5	V
Continuous Collector Current (IC)	1.5	A
Power Dissipation (PD)	62.5	W
Transition Frequency (FT)	350	MHz
DC Current Gain (hFE)	40 to 300	-
Operating Temperature Range (TJ)	-55 to 150	掳C

Instructions for Use:

1. Handling Precautions:

   • Handle with care to avoid damage from electrostatic discharge (ESD). Use appropriate anti-static measures.

2. Mounting:

   • Ensure proper heat sinking if operating near maximum power dissipation limits.
   • Follow manufacturer guidelines for mounting torque and thermal interface materials.

3. Biasing:

   • Ensure the base-emitter junction is not subjected to reverse voltages exceeding VEBO.
   • Keep the collector current within the specified continuous collector current limits.

4. Storage:

   • Store in a cool, dry place away from direct sunlight.
   • Observe polarity when storing and handling to prevent accidental short circuits.

5. Testing:

   • Test using recommended test circuits provided by the manufacturer to ensure accurate parameter measurement.
   • Avoid testing at or near maximum ratings to prevent premature failure.

6. Application Notes:

   • Refer to the datasheet for detailed application notes and circuit diagrams to optimize performance in specific applications.

(For reference only)