Details

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BUY NDS9956A https://www.utsource.net/itm/p/1484476.html
Dual N-Channel Enhancement Mode Field Effect Transistor（3.7A，30V，0.08Ω）N（3.7A, 30V，0.08Ω）

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Drain-Source On-Resistance	RDS(on)	VGS = 4.5V, ID = 1A		0.065		Ω
Gate-Threshold Voltage	VGS(th)	ID = 250μA	0.8	1.2	1.6	V
Continuous Drain Current	ID	Tc = 25°C			3.7	A
Pulse Drain Current	ID(pulse)	Tc = 25°C, t = 10ms			7.4	A
Power Dissipation	PD	Tc = 25°C			0.625	W
Junction Temperature	TJ		-40		150	°C
Storage Temperature Range	Tstg		-55		150	°C

Instructions for NDS9956A:

1. Handling Precautions: The NDS9956A is sensitive to electrostatic discharge (ESD). Use proper ESD protection measures when handling the device.
2. Mounting and PCB Design: Ensure adequate heat dissipation by using a large copper area on the PCB or a heatsink if necessary. Follow recommended layout guidelines to minimize parasitic inductance.
3. Operating Conditions: Operate within specified temperature and voltage limits to ensure reliable performance and prevent damage.
4. Gate Drive Requirements: For optimal switching performance, apply gate drive voltages as per the datasheet specifications. Avoid exceeding the maximum gate-source voltage rating.
5. Testing and Validation: Perform thorough testing under all expected operating conditions before finalizing the design. Validate the circuit's performance to meet the application requirements.

(For reference only)