HM65256BSP-12

HM65256BSP-12


Specifications
SKU
1526734
Details

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x8 Pseudo-Static RAM
Parameter Description Value/Range
Product Name HM65256BSP-12
Type SRAM
Capacity 256K x 8 bit
Package SOP 28-Pin
Operating Voltage Supply voltage for operation VCC = 5.0V 卤 0.5V
Operating Temperature Temperature range for reliable operation -40掳C to +85掳C
Access Time Maximum access time 12ns
Data Retention Minimum data retention time 10 years at 25掳C
Write Cycle Time required to complete a write cycle 12ns
Power Consumption Active current and standby current Active: 30mA, Standby: 20渭A
Organization Internal memory organization 256K x 8

Instructions for Use:

  1. Power Supply: Ensure the supply voltage is within the specified range (5.0V 卤 0.5V). Avoid connecting power in reverse.
  2. Temperature Considerations: Operate the device within the specified temperature range (-40掳C to +85掳C) to ensure reliability.
  3. Signal Timing: Adhere to the access time (12ns) and write cycle timing requirements to prevent data corruption.
  4. Handling Precautions: Handle with care to avoid damage to pins. Follow ESD (Electrostatic Discharge) precautions.
  5. Storage: Store in a dry environment when not in use to maintain longevity.
  6. Installation: Ensure correct orientation during installation to avoid short circuits or damage to the device.
  7. Testing: Perform initial testing under controlled conditions to verify functionality before deployment in critical applications.

For detailed specifications and additional information, refer to the manufacturer's datasheet.

(For reference only)

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