Details
BUY HM65256BSP-12 https://www.utsource.net/itm/p/1526734.html
x8 Pseudo-Static RAM
| Parameter | Description | Value/Range |
|---|---|---|
| Product Name | HM65256BSP-12 | |
| Type | SRAM | |
| Capacity | 256K x 8 bit | |
| Package | SOP | 28-Pin |
| Operating Voltage | Supply voltage for operation | VCC = 5.0V 卤 0.5V |
| Operating Temperature | Temperature range for reliable operation | -40掳C to +85掳C |
| Access Time | Maximum access time | 12ns |
| Data Retention | Minimum data retention time | 10 years at 25掳C |
| Write Cycle | Time required to complete a write cycle | 12ns |
| Power Consumption | Active current and standby current | Active: 30mA, Standby: 20渭A |
| Organization | Internal memory organization | 256K x 8 |
Instructions for Use:
- Power Supply: Ensure the supply voltage is within the specified range (5.0V 卤 0.5V). Avoid connecting power in reverse.
- Temperature Considerations: Operate the device within the specified temperature range (-40掳C to +85掳C) to ensure reliability.
- Signal Timing: Adhere to the access time (12ns) and write cycle timing requirements to prevent data corruption.
- Handling Precautions: Handle with care to avoid damage to pins. Follow ESD (Electrostatic Discharge) precautions.
- Storage: Store in a dry environment when not in use to maintain longevity.
- Installation: Ensure correct orientation during installation to avoid short circuits or damage to the device.
- Testing: Perform initial testing under controlled conditions to verify functionality before deployment in critical applications.
For detailed specifications and additional information, refer to the manufacturer's datasheet.
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