Details

---

BUY 2SJ200A https://www.utsource.net/itm/p/1560725.html
High Power Amplifier Application P Channel MOSFETP MOS

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Collector-Emitter Voltage	VCEO				600	V
Emitter-Collector Voltage	VECE				600	V
Collector-Emitter Saturation Voltage	VCE(sat)	IC = 15A, IE = 0A	1.8			V
Base-Emitter Voltage	VBE(on)	IC = 15A, IE = 0A	2.0			V
Continuous Collector Current	ICC	TC = 25掳C		15		A
Pulse Collector Current	ICM	tp = 1ms		30		A
Power Dissipation	PD	TC = 25掳C			180	W
Junction Temperature	TJ		-55		150	掳C
Storage Temperature	TSTG		-55		150	掳C

Instructions for Use:

1. Mounting and Handling: Handle the device with care to avoid mechanical damage. Ensure proper mounting to a heatsink if operating near maximum power dissipation.
2. Electrical Connections: Verify all electrical connections are secure and correct to prevent short circuits or incorrect biasing.
3. Operating Conditions: Do not exceed the maximum ratings listed in the table to avoid damaging the device. Pay special attention to the junction temperature and power dissipation limits.
4. Thermal Management: Ensure adequate cooling is provided, especially when operating at high current levels or in environments where ambient temperatures are elevated.
5. Pulse Operation: For pulse applications, ensure that the pulse width does not exceed the specified duration to maintain reliability.
6. Storage: Store in a dry, cool place away from direct sunlight and corrosive substances. Observe the storage temperature range to prevent degradation of performance.

(For reference only)