Details

---

BUY MBN900D45A https://www.utsource.net/itm/p/1569158.html

Parameter	Symbol	Value	Unit	Conditions/Notes
Breakdown Voltage	V(BR)DSS	900	V	Drain-Source Breakdown Voltage
Continuous Drain Current	ID	4.5	A	@ Tc = 25°C, VGS = 10V
Pulse Drain Current	IDM	13	A	@ Tc = 25°C, Pulse Width ≤ 300 μs
Gate Threshold Voltage	VGS(th)	2.0 ~ 4.0	V	@ ID = 1 mA
Input Capacitance	Ciss	760	pF	@ VDS = 300V, f = 1 MHz
Output Capacitance	Coff	220	pF	@ VGS = 0V, f = 1 MHz
Reverse Transfer Capacitance	Crss	85	pF	@ VDS = 300V, VGS = 10V, f = 1 MHz
Total Gate Charge	Qg	38	nC	@ VDS = 400V, VGS = 10V, ID = 4.5A
RDS(on)	RDS(on)	1.4	Ω	@ VGS = 10V, ID = 4.5A

Instructions for Use:

1. Operating Temperature: Ensure the device operates within the specified temperature range to avoid damage.
2. Voltage Handling: Do not exceed the maximum rated voltage (V(BR)DSS) to prevent breakdown.
3. Current Limitation: Keep the continuous drain current (ID) and pulse drain current (IDM) within the specified limits.
4. Gate Drive: Apply gate voltages carefully, ensuring they are within the threshold voltage (VGS(th)) range for reliable operation.
5. Capacitance Considerations: Account for input, output, and reverse transfer capacitances in high-frequency applications.
6. Thermal Management: Provide adequate heat sinking if operating at or near maximum current ratings.
7. Storage and Handling: Store in a dry environment and handle with care to avoid electrostatic discharge (ESD) damage.

For detailed specifications and further information, refer to the official datasheet provided by the manufacturer.

(For reference only)