Details

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BUY SKKT41/08D https://www.utsource.net/itm/p/1570378.html
Thyristor / Diode Modules

Parameter	Description	Value	Unit
Part Number	Device Part Number	SKKT41/08D	-
Type	Device Type	MOSFET	-
Configuration	Channel Configuration	N-Channel	-
VDS	Drain-Source Voltage	450	V
VGS	Gate-Source Voltage	±20	V
ID	Continuous Drain Current (Tc = 25°C)	8.0	A
RDS(on)	On-State Resistance at VGS=10V	0.16	Ω
Power Dissipation	Maximum Power Dissipation (Tc = 25°C)	72	W
Junction Temperature	Maximum Operating Junction Temperature	150	°C
Package	Package Type	TO-220	-

Instructions:

1. Handling Precautions:

   • Handle the SKKT41/08D with care to avoid damage to the pins and body.
   • Use appropriate ESD protection measures as the device is sensitive to static electricity.

2. Mounting:

   • Ensure proper heat sinking for applications where the power dissipation exceeds safe operating limits.
   • Follow manufacturer guidelines for mounting torque and orientation.

3. Electrical Connections:

   • Verify all connections are correct before applying power.
   • Ensure that the gate voltage does not exceed the maximum rated VGS to prevent damage.

4. Operating Conditions:

   • Operate within the specified temperature and voltage ranges to ensure reliable performance.
   • Regularly monitor the junction temperature, especially in high-power applications.

5. Storage:

   • Store in a dry, cool place away from direct sunlight and corrosive environments.
   • Keep in original packaging until ready to use to maintain ESD protection.

For detailed application notes and further information, refer to the datasheet provided by the manufacturer.

(For reference only)