Details

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BUY S30VT60 https://www.utsource.net/itm/p/1570805.html
3 Phase Bridge Diode600V 30A

Parameter	Description	Value	Unit
Part Number	Device identifier	S30VT60	-
Type	Device type	MOSFET	-
Package	Encapsulation type	TO-220	-
Vds (Drain-Source Voltage)	Maximum voltage between drain and source	60	V
Id (Continuous Drain Current)	Continuous current through the drain	30	A
Pd (Power Dissipation)	Maximum power dissipation at Tc = 25掳C	180	W
Rds(on) (On-Resistance)	Resistance when fully on at Vgs=10V	0.014	惟
Vgs(th) (Gate-Source Threshold Voltage)	Voltage required to start conducting	2.0 to 4.0	V
Qg (Total Gate Charge)	Total charge required to switch the device	50	nC
Tj (Operating Junction Temperature)	Range of junction temperatures	-55 to 175	掳C

Instructions for Use:

1. Installation:

   • Ensure that the S30VT60 is installed in a well-ventilated area to facilitate heat dissipation.
   • Use appropriate heatsinks if operating near maximum power dissipation limits.

2. Handling:

   • Handle with care to avoid static damage. Use ESD protection measures.
   • Ensure correct orientation during installation to prevent short circuits.

3. Operational Considerations:

   • Do not exceed the specified Vds, Id, or Tj ratings to prevent damage.
   • Ensure gate drive voltages are within the Vgs(th) range for reliable operation.

4. Testing:

   • Test the device in a controlled environment before deployment.
   • Verify all connections are secure and correctly wired.

5. Storage:

   • Store in a dry, cool place away from direct sunlight.
   • Keep components in anti-static packaging until ready for use.

(For reference only)