Details

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BUY IXFN50N80Q2 https://www.utsource.net/itm/p/1571246.html
HiPerFET Power MOSFETs Q-Class

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-source on-state resistance	RDS(on)	-	0.65	-	Ω	VGS = 10V, ID = 24A
Gate charge	QG	-	18	-	nC	VDS = 500V, ID = 24A
Input capacitance	Ciss	-	3900	-	pF	VDS = 400V
Output capacitance	Coss	-	750	-	pF	VDS = 400V
Reverse transfer capacitance	Crss	-	2100	-	pF	VDS = 400V
Threshold voltage	VGS(th)	2	4	6	V	ID = 1mA
Continuous drain current	ID	-	50	-	A	TC = 25°C
Pulsed drain current	IDM	-	120	-	A	Pulse width ≤ 10μs, duty cycle ≤ 0.1%
Maximum drain-source voltage	VDS	-	-	800	V
Maximum gate-source voltage	VGS	-	-	±20	V
Junction temperature	TJ	-55	-	150	°C
Storage temperature	TSTG	-55	-	150	°C

Instructions for IXFN50N80Q2

1. Installation and Handling:

   • Handle the device with care to avoid damage to the leads and body.
   • Ensure proper heat sinking if operating at high power levels.

2. Operating Conditions:

   • Do not exceed the maximum ratings specified in the table.
   • Keep junction temperature within operational limits to ensure reliable performance.

3. Gate Drive:

   • Apply a gate voltage between the recommended thresholds to ensure proper turn-on and turn-off characteristics.
   • Use appropriate gate resistors to control switching speed and minimize switching losses.

4. Thermal Management:

   • For continuous operation at higher currents, use adequate heatsinking or forced air cooling to manage thermal dissipation.

5. Safety Precautions:

   • Ensure all connections are secure and insulated to prevent electrical hazards.
   • Follow manufacturer guidelines for safe operation and handling of high-voltage components.

6. Storage:

   • Store in a dry, cool place away from direct sunlight and sources of electromagnetic interference.
   • Keep devices in antistatic packaging until ready for use to prevent ESD damage.

(For reference only)