FZ800R16KF4

FZ800R16KF4

Category: Modules

Specifications
SKU
1581760
Details

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TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.6KV VBRCES | 800A IC
Parameter Symbol Min Typ. Max Unit Conditions
Blocking Voltage V_B - 1600 - V Repeating Peak Off-state
On-State Voltage Drop V_DS(on) - 2.4 - V I_C = 800 A, T_c = 25°C
Total Power Dissipation P_TOT - - 175 W Case Temperature T_c = 25°C
Junction Temperature T_J - - 150 °C -
Storage Temperature T_STG -40 - 150 °C -
Gate Charge Q_g - 350 - nC V_GS = ±15 V, I_C = 800 A
Switching Loss E_on/off - 3.2/2.8 - mJ I_C = 800 A, f = 1 kHz

Instructions for FZ800R16KF4

  1. Installation and Mounting:

    • Ensure the device is mounted on a heatsink with adequate thermal conductivity to handle up to 175W of power dissipation.
    • Use appropriate mounting hardware to secure the device while ensuring good thermal contact.
  2. Electrical Connections:

    • Connect the gate terminal carefully to avoid parasitic inductance which can cause spurious turn-on.
    • Keep all leads as short as possible to minimize inductance.
  3. Operating Conditions:

    • Do not exceed the maximum junction temperature of 150°C.
    • Operate within the specified blocking voltage limits to prevent breakdown.
    • Ensure the storage temperature range (-40°C to 150°C) is maintained during non-operational periods.
  4. Gate Drive Considerations:

    • Provide sufficient gate drive voltage (±15V recommended) to fully turn on the device and reduce switching losses.
    • Control the rise and fall times of the gate signal to minimize switching losses while avoiding excessive dv/dt that could lead to noise issues.
  5. Thermal Management:

    • Monitor the case temperature and ensure it remains within safe operating limits.
    • Consider forced air cooling or liquid cooling for high-power applications.
  6. Testing and Verification:

    • Perform initial testing at lower current levels to verify proper operation before scaling up to full load conditions.
    • Regularly check for overheating and electrical performance degradation over time.
  7. Handling Precautions:

    • Handle the device with care to avoid mechanical damage.
    • Use anti-static precautions to protect against ESD damage.
(For reference only)

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