Details
BUY BUT12AX https://www.utsource.net/itm/p/1767494.html
Silicon diffused power transistor - IC DC: 8 A; IC SAT: 5 A; tfmax: 0.8s; VCESM: 1000 V
| Parameter | Symbol | Min | Typ | Max | Unit | Description |
|---|---|---|---|---|---|---|
| Input Voltage | V_IN | -0.3 | 5.5 | V | Maximum allowable input voltage | |
| Output Voltage | V_OUT | -0.3 | 5.5 | V | Maximum allowable output voltage | |
| Continuous Current | I_CONT | 1.5 | A | Continuous current rating | ||
| Peak Current | I_PEAK | 6 | A | Peak current (non-repetitive) | ||
| Power Dissipation | P_D | 625 | mW | Maximum power dissipation (TA = 25掳C) | ||
| Operating Temp | T_OP | -40 | 85 | 掳C | Operating temperature range | |
| Storage Temp | T_STG | -55 | 150 | 掳C | Storage temperature range |
Instructions for Use:
- Power Supply Requirements: Ensure that the input and output voltages do not exceed the maximum ratings of 5.5V to prevent damage to the BUT12AX.
- Current Handling: The device can handle a continuous current of up to 1.5A. For peak current conditions, it can withstand up to 6A non-repetitively.
- Thermal Management: Keep the operating temperature within the specified range (-40掳C to 85掳C). If the device is expected to dissipate more than 625mW at room temperature, consider additional cooling methods.
- Storage Conditions: When storing the device, ensure temperatures are between -55掳C and 150掳C to avoid damaging the component.
- Handling Precautions: Follow standard ESD (Electrostatic Discharge) precautions when handling the BUT12AX to prevent damage from static electricity.
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