BUT12AX

BUT12AX


Specifications
SKU
1767494
Details

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Silicon diffused power transistor - IC DC: 8 A; IC SAT: 5 A; tfmax: 0.8s; VCESM: 1000 V
Parameter Symbol Min Typ Max Unit Description
Input Voltage V_IN -0.3 5.5 V Maximum allowable input voltage
Output Voltage V_OUT -0.3 5.5 V Maximum allowable output voltage
Continuous Current I_CONT 1.5 A Continuous current rating
Peak Current I_PEAK 6 A Peak current (non-repetitive)
Power Dissipation P_D 625 mW Maximum power dissipation (TA = 25掳C)
Operating Temp T_OP -40 85 掳C Operating temperature range
Storage Temp T_STG -55 150 掳C Storage temperature range

Instructions for Use:

  1. Power Supply Requirements: Ensure that the input and output voltages do not exceed the maximum ratings of 5.5V to prevent damage to the BUT12AX.
  2. Current Handling: The device can handle a continuous current of up to 1.5A. For peak current conditions, it can withstand up to 6A non-repetitively.
  3. Thermal Management: Keep the operating temperature within the specified range (-40掳C to 85掳C). If the device is expected to dissipate more than 625mW at room temperature, consider additional cooling methods.
  4. Storage Conditions: When storing the device, ensure temperatures are between -55掳C and 150掳C to avoid damaging the component.
  5. Handling Precautions: Follow standard ESD (Electrostatic Discharge) precautions when handling the BUT12AX to prevent damage from static electricity.
(For reference only)

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