Details

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BUY STE36N50-DK https://www.utsource.net/itm/p/1834383.html
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE

Parameter	Value	Unit
Type	N-Channel MOSFET	-
Voltage (Vds)	500	V
Current (Id)	36	A
Power Dissipation	180	W
Gate Charge	270	nC
Total Gate Charge	460	nC
Input Capacitance	2900	pF
Output Capacitance	1200	pF
Reverse Transfer Capacitance	350	pF
Rds(on) at 25掳C	0.065	惟
Rds(on) at 100掳C	0.095	惟
Junction Temperature	-55 to 150	掳C

Instructions for STE36N50-DK:

1. Handling and Storage:

   • Store in a dry environment.
   • Handle with ESD precautions to avoid damage.

2. Installation:

   • Ensure proper heat sinking if operating near maximum current or power dissipation.
   • Mounting torque should not exceed the specified limit for the package type.

3. Operating Conditions:

   • Do not exceed the absolute maximum ratings listed in the parameter table.
   • Keep junction temperature within specified limits to ensure reliable operation.

4. Testing:

   • Use appropriate test equipment that can handle high voltage and current levels.
   • Verify all connections are secure before applying power.

5. Applications:

   • Suitable for high-power switching applications, including motor control, power supplies, and inverters.

For detailed specifications and more specific application notes, refer to the manufacturer's datasheet.

(For reference only)