Details

---

BUY IXTH75N10 https://www.utsource.net/itm/p/1835378.html
MegaMOSFET

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-Emitter Breakdown Voltage	V(BR)CEO	IC = 250 渭A, Tj = 25掳C	-	-	100	V
Collector-Emitter Saturation Voltage	VCE(sat)	IC = 7.5 A, IB = 750 mA, Tj = 25掳C	-	1.8	-	V
Collector-Emitter Cutoff Current	ICEO	VCE = 25 V, Tj = 25掳C	-	50	-	渭A
Gate Threshold Voltage	VGS(th)	ID = 250 渭A, Tj = 25掳C	2.0	4.0	-	V
Total Power Dissipation	PD	Tc = 25掳C	-	-	300	W
Junction Temperature	Tj	-	-	-	150	掳C
Storage Temperature Range	Tstg	-	-55	-	150	掳C

Instructions for Use:

1. Mounting and Handling:

   • Ensure the IXTH75N10 is mounted on a suitable heatsink to manage heat dissipation effectively.
   • Handle with care to avoid damage to the leads and body.

2. Biasing and Operation:

   • Ensure that the gate voltage (VGS) does not exceed the maximum threshold to prevent device damage.
   • Operate within specified current limits to avoid exceeding power dissipation ratings.

3. Storage and Environment:

   • Store in a dry, cool place away from direct sunlight.
   • Operate within the specified temperature ranges to ensure reliable performance.

4. Testing:

   • Perform initial testing under controlled conditions to verify parameters like VCE(sat) and VGS(th).
   • Regularly monitor operating temperatures and electrical characteristics during prolonged use.

5. Safety Precautions:

   • Always disconnect power before making any adjustments or measurements.
   • Use appropriate protective equipment when handling high-power devices.

(For reference only)