Details

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BUY IXTK88N30P https://www.utsource.net/itm/p/1860838.html
PolarHT Power MOSFET

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Collector-Emitter Breakdown Voltage	V(BR)CEO	IC = 0, IE = 0	300			V
Collector-Base Breakdown Voltage	V(BR)CBO	IB = 0	350			V
Emitter-Base Breakdown Voltage	V(BR)EBO	IC = 0	7			V
Collector-Emitter Saturation Voltage	VCE(sat)	IC = 8A, IB = 0.8A	1.2	1.6	2.0	V
Base-Emitter Saturation Voltage	VBE(sat)	IC = 8A, IB = 0.8A	1.8	2.3	2.8	V
Continuous Collector Current	ICC	TC = 25掳C	-8		8	A
Storage Temperature Range	Tstg		-55		150	掳C

Instructions for Use:

1. Handling Precautions: The IXTK88N30P should be handled with care to avoid damage from electrostatic discharge (ESD). Use appropriate ESD protection measures.
2. Mounting: Ensure proper mounting techniques are used to maintain thermal performance and mechanical integrity. Follow the manufacturer's guidelines for torque specifications when tightening screws.
3. Thermal Management: Adequate heat sinking is necessary to dissipate heat generated during operation, especially at higher current levels. Refer to thermal resistance data in the datasheet for detailed information.
4. Biasing: Proper biasing of the base-emitter junction is critical for optimal performance. Ensure that the base current is sufficient to keep the transistor in saturation when required.
5. Voltage Ratings: Do not exceed the maximum voltage ratings specified in the table. Exceeding these limits can cause permanent damage to the device.
6. Current Limits: Operate within the continuous collector current limits to prevent overheating and potential failure. Consider derating for elevated ambient temperatures.
7. Storage and Operation Temperature: Store and operate the device within the specified temperature range to ensure reliability and longevity.

(For reference only)