Details

---

BUY 6MBI450U-170 https://www.utsource.net/itm/p/1865303.html
IGBT Module U-Series

Parameter	Symbol	Min	Typ	Max	Unit	Description
Blocking Voltage	V(BR)DSS	-	1700	-	V	Maximum repetitive peak reverse voltage
Continuous Drain Current	ID	-	450	-	A	Continuous drain current at Tc = 25掳C
Power Dissipation	PD	-	-	3600	W	Maximum power dissipation
Junction Temperature	Tj	-25	-	175	掳C	Operating junction temperature range
Storage Temperature	Tstg	-55	-	150	掳C	Operating storage temperature range
Gate Charge	Qg	-	85	-	nC	Total gate charge
Input Capacitance	Ciss	-	4900	-	pF	Input capacitance at VDS = 400V, VGS = 0V
Output Capacitance	Coss	-	900	-	pF	Output capacitance at VDS = 400V, VGS = 0V
Reverse Transfer Capacitance	Crss	-	140	-	pF	Reverse transfer capacitance at VDS = 400V, VGS = 0V

Instructions for Use

1. Handling Precautions:

   • Ensure proper ESD (Electrostatic Discharge) protection when handling the device.
   • Avoid exceeding the maximum ratings specified in the table to prevent damage.

2. Mounting and Installation:

   • Mount the device on a heatsink if operating near or at maximum power dissipation to maintain junction temperature within safe limits.
   • Follow manufacturer guidelines for mounting torque and thermal interface materials.

3. Operating Conditions:

   • Ensure that the operating conditions do not exceed the specified junction and storage temperature ranges.
   • Keep continuous drain current within rated limits to avoid overheating and potential failure.

4. Testing and Measurement:

   • When measuring parameters like capacitance (Ciss, Coss, Crss), use the specified test conditions to ensure accuracy.
   • For dynamic testing, consider the total gate charge (Qg) to estimate switching losses.

5. Application Considerations:

   • This device is suitable for high-power switching applications where fast switching and low losses are required.
   • Ensure that the application circuit provides adequate protection against overvoltage and overcurrent conditions.

(For reference only)