Details
BUY SI2308BDS-T1-GE3 https://www.utsource.net/itm/p/1865850.html
N-Channel 60-V (D-S) MOSFET
| Parameter | Value |
|---|---|
| Part Number | SI2308BDS-T1-GE3 |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Package Type | TOLL (TO-263-8) |
| Pin Count | 8 |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -55掳C to +175掳C |
| Drain-Source Voltage (Vds) | 60V |
| Gate-Source Voltage (Vgs) | 卤20V |
| Continuous Drain Current (Id) | 9.2A at 25掳C, 4.9A at 70掳C |
| Pulsed Drain Current (Idm) | 58A |
| Rds(on) @ Vgs=10V | 4.0 m惟 |
| Gate Charge (Qg) | 35 nC |
| Input Capacitance (Ciss) | 1280 pF |
| Output Capacitance (Coss) | 125 pF |
| Total Power Dissipation (Ptot) | 42W at TC=25掳C |
| Thermal Resistance, Junction to Case (R胃JC) | 0.7掳C/W |
| Thermal Resistance, Junction to Ambient (R胃JA) | 36掳C/W |
Instructions for Use:
- Handling Precautions: The SI2308BDS-T1-GE3 is sensitive to electrostatic discharge (ESD). Handle with appropriate ESD precautions.
- Mounting: Ensure proper heat sinking if operating near maximum power dissipation limits. Follow the manufacturer's guidelines for mounting and thermal management.
- Biasing: Ensure that the gate-source voltage (Vgs) does not exceed the specified maximum of 卤20V to avoid damaging the device.
- Operation Temperature: Operate within the specified temperature range (-55掳C to +175掳C) to ensure reliable performance and longevity.
- Current Limitation: Do not exceed the continuous or pulsed drain current ratings to prevent overheating or damage.
- Capacitance Considerations: Take into account the input and output capacitances when designing circuits to minimize switching losses and optimize performance.
- Testing: Before final assembly, test the device under conditions similar to those expected in the application to ensure it meets all specifications.
For detailed application notes and more specific guidance, refer to the datasheet provided by Vishay Siliconix.
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