Details

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BUY IXFN36N50 https://www.utsource.net/itm/p/1872569.html
HiPerFET Power MOSFETs Single Die MOSFET

Parameter	Symbol	Value	Unit	Notes
Maximum Collector-Emitter Voltage	VCES	500	V
Maximum Gate-Emitter Voltage	VGE	卤20	V
Maximum Continuous Collector Current	IC	36	A	@ Tc = 25掳C
Maximum Pulse Collector Current	ICM	144	A	tp = 10 ms, duty cycle 1%
Total Device Dissipation	PD	720	W	@ Tc = 25掳C
Junction Temperature	Tj	-55 to +150	掳C
Storage Temperature	Tstg	-55 to +150	掳C
Forward Transconductance	gfs	22.5	S	@ VGE = 15V, IC = 10A
Turn-on Delay Time	td(on)	0.18	渭s	@ VGE = 15V, IC = 10A
Rise Time	tr	0.29	渭s	@ VGE = 15V, IC = 10A
Turn-off Delay Time	td(off)	0.27	渭s	@ VGE = -15V, IC = 10A
Fall Time	tf	0.48	渭s	@ VGE = -15V, IC = 10A

Instructions for IXFN36N50

1. Handling and Storage:

   • Store in a dry, cool place.
   • Avoid exposure to high humidity and temperature extremes.
   • Handle with care to avoid damage to the leads and body.

2. Mounting:

   • Ensure proper heat sinking to maintain junction temperature within specified limits.
   • Use insulated mounting hardware if necessary to prevent short circuits.

3. Electrical Connections:

   • Verify all connections are secure and correctly made.
   • Apply gate voltage carefully to avoid exceeding maximum ratings.

4. Operational Considerations:

   • Monitor device temperature during operation to ensure it does not exceed the maximum allowable junction temperature.
   • Ensure that pulse current ratings are adhered to, especially for applications involving short duration pulses.

5. Testing:

   • Test the device under controlled conditions before integrating into final designs.
   • Refer to the datasheet for detailed test conditions and procedures.

(For reference only)