IXTQ62N15P

IXTQ62N15P


Specifications
SKU
1872954
Details

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PolarHT Power MOSFET
Parameter Symbol Min Typ Max Unit Conditions
Collector-Emitter Voltage V CES - - 650 V
Collector-Base Voltage V CBO - - 650 V
Emitter-Base Voltage V EBO - - 7 V
Continuous Collector Current I C - - 15 A Tc = 25°C
Continuous Collector Current I CM - - 9.4 A Tc = 100°C
Pulse Collector Current I CP - - 38 A Tj = 25°C, Pulse Width ≤ 10ms, Duty Cycle ≤ 2%
Power Dissipation P TOT - - 170 W Tc = 25°C
Junction Temperature T j - - 175 °C
Storage Temperature T stg -55 - 175 °C

Instructions for Use:

  1. Mounting and Handling:

    • Ensure proper heat sinking to manage the power dissipation.
    • Handle with care to avoid damage to the leads and body.
  2. Electrical Connections:

    • Connect the collector (C), emitter (E), and base (B) terminals correctly as per your circuit design.
    • Ensure that voltage ratings are not exceeded to prevent device failure.
  3. Thermal Management:

    • Monitor junction temperature to ensure it does not exceed the maximum limit of 175°C.
    • For continuous operation at higher currents, use adequate cooling methods like heatsinks or forced air cooling.
  4. Pulse Operation:

    • When operating in pulse mode, ensure that pulse width and duty cycle are within specified limits to avoid overheating.
  5. Storage and Operating Environment:

    • Store in a dry environment within the storage temperature range (-55°C to 175°C).
    • Protect from electrostatic discharge (ESD) during handling.
  6. Compliance and Standards:

    • Ensure that the application complies with relevant safety standards and regulations.

Note: Always refer to the manufacturer's datasheet for the most accurate and detailed specifications and guidelines.

(For reference only)

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