Details

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BUY APT20M36BFLL https://www.utsource.net/itm/p/1891814.html
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

Parameter	Description	Value
Part Number	Product Identifier	APT20M36BFLL
Type	Device Type	MOSFET
Package	Encapsulation Type	TO-252 (DPAK)
VDS(max)	Drain to Source Voltage	36V
RDS(on)	On-State Resistance	20mΩ
ID(max)	Continuous Drain Current	10A
PD	Power Dissipation	2.4W
VGS(th)	Gate Threshold Voltage	2.0V to 4.0V
Qg	Total Gate Charge	18nC
EAS	Avalanche Energy	190mJ
Operating Temperature	Junction Temperature Range	-55°C to 175°C

Instructions for Use:

1. Handling Precautions: This device is sensitive to electrostatic discharge (ESD). Handle with appropriate ESD protection measures.
2. Mounting: Ensure that the mounting surface is clean and free from contaminants. Apply thermal paste if necessary for better heat dissipation.
3. Soldering: Use a temperature-controlled soldering iron. Do not exceed 260°C for more than 10 seconds per connection point to avoid damaging the component.
4. Storage: Store in a dry, cool place away from direct sunlight and sources of heat.
5. Application Notes: Refer to the manufacturer’s application notes for detailed information on circuit design considerations and best practices.
6. Safety: Always ensure the device operates within its specified voltage and current limits to prevent damage or failure.

(For reference only)