IXKH20N60C5

IXKH20N60C5


Specifications
SKU
1905773
Details

BUY IXKH20N60C5 https://www.utsource.net/itm/p/1905773.html
CoolMOS? 1) Power MOSFET
Parameter Symbol Conditions Min Typ Max Unit
Collector-Emitter Voltage V CES 600 V
Collector Current I C Tc = 25掳C 20 A
Collector Current I CM Tc = 80掳C 14 A
Gate Charge Q G V GE = 卤15V 37 nC
Total Gate Charge Q GT V GE = 卤15V 98 nC
Turn-on Time t on V GE = 15V, R G = 5惟 55 ns
Turn-off Time t off V GE = -15V, R G = 5惟 120 ns
Reverse Transfer Capacitance C RSS V CE = 400V 340 pF

Instructions for IXKH20N60C5:

  1. Handling and Storage:

    • Store in a dry environment.
    • Handle with care to avoid static damage.
  2. Installation:

    • Ensure proper heat sinking if operating near maximum current ratings.
    • Use appropriate gate resistors to control switching times.
  3. Operating Conditions:

    • Do not exceed the maximum collector-emitter voltage (600V).
    • Operate within specified temperature ranges to ensure reliability.
  4. Testing and Troubleshooting:

    • Verify gate-source voltage levels are within safe operating limits.
    • Monitor junction temperature to prevent overheating.
  5. Safety Precautions:

    • Always disconnect power before performing any tests or modifications.
    • Use protective equipment when handling high voltages.
(For reference only)

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