Details
BUY IXKH20N60C5 https://www.utsource.net/itm/p/1905773.html
CoolMOS? 1) Power MOSFET
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Collector-Emitter Voltage | V CES | 600 | V | |||
| Collector Current | I C | Tc = 25掳C | 20 | A | ||
| Collector Current | I CM | Tc = 80掳C | 14 | A | ||
| Gate Charge | Q G | V GE = 卤15V | 37 | nC | ||
| Total Gate Charge | Q GT | V GE = 卤15V | 98 | nC | ||
| Turn-on Time | t on | V GE = 15V, R G = 5惟 | 55 | ns | ||
| Turn-off Time | t off | V GE = -15V, R G = 5惟 | 120 | ns | ||
| Reverse Transfer Capacitance | C RSS | V CE = 400V | 340 | pF |
Instructions for IXKH20N60C5:
Handling and Storage:
- Store in a dry environment.
- Handle with care to avoid static damage.
Installation:
- Ensure proper heat sinking if operating near maximum current ratings.
- Use appropriate gate resistors to control switching times.
Operating Conditions:
- Do not exceed the maximum collector-emitter voltage (600V).
- Operate within specified temperature ranges to ensure reliability.
Testing and Troubleshooting:
- Verify gate-source voltage levels are within safe operating limits.
- Monitor junction temperature to prevent overheating.
Safety Precautions:
- Always disconnect power before performing any tests or modifications.
- Use protective equipment when handling high voltages.
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