Details

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BUY FB33N15D https://www.utsource.net/itm/p/1906698.html

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Drain-Source Voltage	VDSS		-15		150	V
Gate-Source Voltage	VGS		-20		20	V
Continuous Drain Current	ID	Tc = 25掳C		6.4		A
Pulse Drain Current	IDM	Tc = 25掳C, t = 10ms		18		A
Gate Charge	Qg	VGS = 10V		19		nC
Input Capacitance	Ciss	VDS = 15V, VGS = 0V		1300		pF
Output Capacitance	Coss	VDS = 15V, VGS = 0V		370		pF
Reverse Transfer Capacitance	Crss	VDS = 15V, VGS = 0V		930		pF
Threshold Voltage	Vth	ID = 250渭A	2.0	3.0	4.0	V
On-State Resistance	RDS(on)	VGS = 10V		0.28		惟

Instructions for FB33N15D:

1. Storage and Handling:

   • Store in a dry environment to prevent moisture damage.
   • Handle with care to avoid static discharge; use ESD protective equipment.

2. Mounting:

   • Ensure proper alignment of the component during mounting.
   • Apply adequate torque when tightening screws or clamps to secure the device without causing mechanical stress.

3. Operating Conditions:

   • Do not exceed the maximum ratings specified in the parameter table.
   • Operate within the temperature range specified by the manufacturer to ensure reliable performance.

4. Power Supply Considerations:

   • Ensure the power supply voltage does not exceed the rated VDSS to prevent breakdown.
   • Use appropriate decoupling capacitors near the power pins to minimize noise.

5. Gate Drive:

   • Provide sufficient gate drive voltage (VGS) to fully turn on the device and reduce RDS(on).
   • Ensure the gate drive circuit can supply the necessary current to charge and discharge the gate capacitance quickly.

6. Thermal Management:

   • Monitor the junction temperature to ensure it stays within safe operating limits.
   • Use heatsinks or cooling solutions if necessary to dissipate heat effectively.

7. Testing:

   • Test the device under controlled conditions before integrating into final applications.
   • Verify all parameters meet the specifications outlined in the datasheet.

(For reference only)