1N4448W

1N4448W


Specifications
SKU
4009371
Details

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SURFACE MOUNT SWITCHING DIODES
Parameter Symbol Min Typ Max Unit Description
Peak Repetitive Reverse Voltage VRRM - 100 - V Maximum reverse voltage the diode can withstand.
Average Rectified Forward Current (Tc=75掳C) IF(AV) - 300 - mA Continuous forward current at a case temperature of 75掳C.
Non-Repetitive Peak Surge Current IFSM - 2000 - mA Peak surge current in a non-repetitive condition.
Junction Capacitance CJ0 - 4 - pF Capacitance at zero bias.
Reverse Recovery Time trr - 6 - ns Time taken for the diode to recover from on-state to off-state during switching.
Forward Voltage Drop VF - 1.0 - V Voltage drop across the diode when conducting forward current.
Operating and Storage Temperature Range Toper/Tstg -55 - 150 掳C Temperature range for operation and storage.

Instructions for Use:

  1. Mounting: Ensure proper heat dissipation if operating near maximum current limits.
  2. Voltage Handling: Do not exceed the peak repetitive reverse voltage (VRRM) to prevent damage.
  3. Current Ratings: Operate within the average rectified forward current (IF(AV)) ratings, especially considering ambient temperature effects.
  4. Surge Conditions: For applications involving surge currents, ensure they do not exceed the non-repetitive peak surge current (IFSM) limit.
  5. Switching Applications: Consider the reverse recovery time (trr) for high-frequency switching applications to minimize losses.
  6. Storage and Operation: Keep within the specified operating and storage temperature ranges to ensure reliability and longevity.
  7. Capacitance Awareness: Be aware of junction capacitance (CJ0) impacts in high-frequency circuits.
(For reference only)

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