Details

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BUY 2SC1213ACZ https://www.utsource.net/itm/p/4029479.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Collector-Emitter Voltage	VCEO	-	-	40	V	Maximum voltage between collector and emitter with the base open.
Collector-Base Voltage	VCBO	-	-	60	V	Maximum voltage between collector and base with the emitter open.
Emitter-Base Voltage	VEBO	-1	-	5	V	Maximum voltage between emitter and base in reverse direction.
Collector Current	IC	-	-	0.5	A	Continuous collector current.
Total Power Dissipation	PT	-	-	0.625	W	Maximum power dissipation at Tc = 25掳C.
Forward Current Transfer Ratio	hFE	300	700	1000	-	Current gain (DC) at IC = 150mA, VCE = 5V.

Instructions for Use:

1. Mounting: Ensure that the device is mounted on a suitable heatsink if operating near maximum power dissipation to maintain thermal stability.
2. Biasing: When biasing the transistor, ensure that the base-emitter junction does not exceed the specified VEBO to avoid damage.
3. Operating Conditions: Operate within the specified limits of VCEO, VCBO, and VEBO to prevent breakdown or failure.
4. Storage Temperature: Store the device in a dry place with temperatures ranging from -55掳C to +150掳C.
5. Handling Precautions: Handle with care to avoid mechanical damage. Use appropriate ESD protection measures during handling.
6. Soldering: Solder within the temperature range of 260掳C for no more than 10 seconds to avoid thermal shock.

For detailed specifications and further information, refer to the manufacturer's datasheet.

(For reference only)