Details

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BUY 2N6667 https://www.utsource.net/itm/p/4032350.html
POWER TRANSISTORS(65W)

Parameter	Symbol	Min	Typ	Max	Unit
Collector-Emitter Voltage	Vceo	-	-	60	V
Emitter-Base Voltage	Vebo	-	-	5	V
Collector Current	Ic	-	-	8	A
Power Dissipation	Ptot	-	-	125	W
Junction Temperature	Tj	-20	-	150	掳C
Storage Temperature	Tstg	-65	-	150	掳C

Instructions for Use:

1. Mounting: Ensure the device is securely mounted to a suitable heatsink to manage heat dissipation, especially under high-power conditions.
2. Biasing: Proper biasing of the base-emitter junction is critical to avoid excessive current and potential damage to the transistor.
3. Voltage Ratings: Do not exceed the maximum collector-emitter voltage (Vceo) or emitter-base voltage (Vebo) ratings to prevent breakdown.
4. Current Handling: The maximum collector current (Ic) should not be exceeded to ensure reliable operation and longevity of the device.
5. Temperature Management: Keep the junction temperature (Tj) within specified limits by ensuring adequate cooling, particularly in high-power applications.
6. Storage Conditions: Store the device in an environment where the temperature remains within the storage temperature range (Tstg) to prevent damage from extreme temperatures.

(For reference only)