Details

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BUY 2SC6142 https://www.utsource.net/itm/p/4044689.html
High Voltage Switching Applications

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Collector-Emitter Voltage	VCEO	-	-	80	V
Collector-Base Voltage	VCBO	-	-	90	V
Emitter-Base Voltage	VEBO	-	-	5	V
Collector Current	IC	-	-	15	A
Base Current	IB	-	-	3	A
Power Dissipation	PD	-	-	125	W	Tc = 25掳C
Junction Temperature	TJ	-	-	150	掳C
Storage Temperature	TSTG	-55	-	150	掳C

Instructions for Use:

1. Mounting: Ensure the transistor is mounted on a suitable heat sink if operating near its maximum power dissipation limits.
2. Biasing: Carefully set the base current to avoid exceeding the maximum collector current and power dissipation ratings.
3. Operating Conditions: Keep the junction temperature within specified limits by ensuring adequate cooling.
4. Storage and Handling: Store in recommended conditions to prevent damage from extreme temperatures.
5. Electrostatic Discharge (ESD) Protection: Handle with care to avoid ESD, which can damage the semiconductor structure.

(For reference only)