Details

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BUY 2SC5706-P-E https://www.utsource.net/itm/p/4049303.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Collector-Emitter Voltage	VCEO	-	-	60	V	Maximum voltage between collector and emitter with base open.
Emitter-Collector Voltage	VECEO	-	-	60	V	Maximum voltage between emitter and collector with base open.
Collector-Base Voltage	VCBO	-	-	60	V	Maximum voltage between collector and base with emitter open.
Base-Emitter Voltage	VBE	-1.5	-	5.5	V	Maximum reverse voltage between base and emitter.
DC Current Gain	hFE	120	300	700	-	Current gain at IC = 150mA, VCE = 10V.
Transition Frequency	fT	-	450	-	MHz	Unity gain frequency.
Power Dissipation	PD	-	-	800	mW	Maximum power dissipation at Tc = 25掳C.
Operating Temperature Range	Topr	-55	-	150	掳C	Operating temperature range.

Instructions for Use:

1. Handling Precautions:

   • Avoid exposing the transistor to voltages or currents exceeding the maximum ratings listed in the table.
   • Handle with care to avoid damage from electrostatic discharge (ESD).

2. Mounting:

   • Ensure proper heat sinking if operating near the maximum power dissipation limits.
   • Follow manufacturer guidelines for mounting orientation and torque specifications.

3. Biasing:

   • Set the biasing conditions to ensure the transistor operates within its safe operating area (SOA).
   • For optimal performance, operate within the specified current gain (hFE) range.

4. Testing:

   • Verify all connections before applying power.
   • Monitor temperature and electrical parameters during operation to ensure they remain within specified limits.

5. Storage:

   • Store in a dry, cool place away from direct sunlight.
   • Keep in original packaging until ready for use to protect against static damage.

(For reference only)